Seminars

We cordially invite to the next Semiconductor Materials Engineering Seminar,
which will take place on Friday, January 30th, at 11:15 a.m. in room 320a .

During the seminar, MSc Magdalena Łukowicz from Scanway S.A, will give a talk: Rekonstrukcja czoła fali z wykorzystaniem czujnika Shacka-Hartmanna

We cordially invite to the next Semiconductor Materials Engineering Seminar,
which will take place on Friday, January 23th, at 11:15 a.m. in room 320a.

During the seminar, MSc Karolina Ciesiołkiewicz-Klepek from the Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, will give a talk: Wykorzystanie optyki światłowodowej w układach spektroskopowych do badania kryształów van der Waalsa

We cordially invite to the next Semiconductor Materials Engineering Seminar,
which will take place on Friday, January 16th, at 11:15 a.m. in room 320a.

During the seminar, MSc Kamil Trajda from the Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, will give a talk: MBE growth and characterization of III-nitride microcolumns for UV LEDs

We cordially invite to the next Semiconductor Materials Engineering Seminar,
which will take place on Friday, December 19th, at 11:15 a.m. in room 320a.

During the seminar, MSc Andrii Bodnar, PhD from the Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, will give a talk: Badania eksperymentalne oraz obliczeniowe ab initio strukturalnych i elektronowych właściwości głębokich defektów w wybranych kryształach van der Waalsa

Abstract

Referat poświęcony jest podsumowaniu pracy 2 lat studiów doktoranckich realizowanych w Katedrze Inżynierii Materiałów Półprzewodnikowych. (For English speaking people: the presentation orally in Polish, on screen in English)

We cordially invite to the next Semiconductor Materials Engineering Seminar,
which will take place on Friday, November 7th, at 11:15 a.m. in room 320a.

During the seminar, MSc, eng. Szymon Krawczyk from the Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, will give a talk: The effect of thermal annealing on deep level defects in boron-diluted III-V compounds

Abstract

The incorporation of boron into III–V compound semiconductors has recently attracted attention due to its potential to modify electronic and optical properties while maintaining lattice compatibility with conventional materials such as GaAs and InGaAs. However, the presence of deep-level defects introduced during growth or post-growth processing can significantly influence carrier dynamics and device performance. In this study, the effect of thermal annealing on deep-level defects in boron-diluted III–V compounds was investigated using deep-level transient spectroscopy (DLTS). The results reveal that controlled thermal treatment can effectively reduce specific deep traps associated with boron incorporation. These findings provide valuable insights into the defect engineering of boron-containing III–V semiconductors, offering guidance for optimizing their use in next-generation optoelectronic and high-speed electronic devices. These findings provide valuable insights into the defect engineering of boron-containing III–V semiconductors, offering guidance for optimizing their use in next-generation optoelectronic and high-speed electronic devices.

We cordially invite you to the next Semiconductor Materials Engineering Seminar.,
which will take place on Friday, October 24th, at 11:15 a.m. in room 320a.

During the seminar, MSc, Eng. Szymon Krawczyk from the Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, will give a talk entitled: The effect of thermal annealing on deep level defects in boron-diluted III-V compounds

Abstract

The incorporation of boron into III–V compound semiconductors has recently attracted attention due to its potential to modify electronic and optical properties while maintaining lattice compatibility with conventional materials such as GaAs and InGaAs.
However, the presence of deep-level defects introduced during growth or post-growth processing can significantly influence carrier dynamics and device performance.
In this study, the effect of thermal annealing on deep-level defects in boron-diluted III–V compounds was investigated using deep-level transient spectroscopy (DLTS). The results reveal that controlled thermal treatment can effectively reduce specific deep traps associated with boron incorporation.
These findings provide valuable insights into the defect engineering of boron-containing III–V semiconductors, offering guidance for optimizing their use in next-generation optoelectronic and high-speed electronic devices.